Semiconductor device with a reduced element isolation region

Details Semiconductor device with a reduced element isolation region Semiconductor device with a reduced element isolation region

1995-12-05

1998-02-03

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257409, 257488, 257508, 257630, H01L 2976, H01L 2900

Patent

active

057147876

ABSTRACT:
In a semiconductor device and a method for manufacturing the semiconductor device, a width of an element isolation region is reduced by a field-shield. A silicon oxide film of a side wall of a polycrystal silicon film is fabricated by thermally oxidizing a side wall of the polycrystal silicon film, while using a silicon nitride film as an antioxidation film. A width of a field-shield electrode made of the polycrystal silicon film is made smaller than a limit value of the very fine processing.

REFERENCES:
patent: 4825278 (1989-04-01), Hillenius et al.
Wakamiya et al., Fully Planarized 0.5um Technologies For 16M DRAM, IEDM-88, pp.246-249, 1988.

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