Semiconductor device including memory cell having a capacitance

Details Semiconductor device including memory cell having a capacitance Semiconductor device including memory cell having a capacitance

1995-11-03

1998-02-03

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257903, 257622, 257773, H01L 2711

Patent

active

057147787

ABSTRACT:
The invention provides a semiconductor device of improved reliability wherein a memory cell can accumulate a sufficient amount of charge and written information in a flip-flop can be reproduced with certainty and a method of producing the semiconductor device. According to the present invention, grounding line 15 is used for one of electrodes for a capacitance element, and a polycrystalline silicon layer which is the other capacitor electrode 16 is provided just above grounding line 15. By the construction, the area of the capacitor electrode is increased on a memory cell.

REFERENCES:
patent: 5350933 (1994-09-01), Yoshihara
patent: 5352916 (1994-10-01), Kiyono et al.
patent: 5426324 (1995-06-01), Rajeevakumar
patent: 5438537 (1995-08-01), Sasaki
"Center Wordline Cell: A New Symmetric Layout Cell for 64Mb SRAM" Naiki et al; 1993; IEEE, pp. 817-820.

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