Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-03-27
2000-08-01
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438622, 438637, 438627, 438672, H01L 2144
Patent
active
060966467
ABSTRACT:
A method for forming metal line of a semiconductor device in which, if the aspect ratio of the contact holes is big, contact holes are buried with a CVD method using the HDP method, and the line process is simplified to improve the reliability is disclosed, including the steps of forming an insulating film having a contact hole on a semiconductor substrate; forming a barrier metal layer on the insulating film including the contact hole; and forming a metal line layer on the barrier metal layer with a CVD method using a high density plasma.
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Lee Chang Jae
Park Nae Hak
Bowers Charles
LG Semicon Co. Ltd.
Nguyen Thanh
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