Methods of forming conductive lines

Details Methods of forming conductive lines Methods of forming conductive lines

1996-10-31

2000-08-01

Booth, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438588, 438589, 438638, 438183, 438184, 438722, 438723, H01L 21338, H01L 213205, H01L 21302

Patent

active

06096636&

ABSTRACT:
A semiconductor processing method of forming a plurality of conductive lines includes, a) providing a substrate; b) providing a first conductive material layer over the substrate; c) providing a first insulating material layer over the first conductive layer; d) etching through the first insulating layer and the first conductive layer to the substrate to both form a plurality of first conductive lines from the first conductive layer and provide a plurality of grooves between the first lines, the first lines being capped by first insulating layer material, the first lines having respective sidewalls; e) electrically insulating the first line sidewalls; and f) after insulating the sidewalls, providing the grooves with a second conductive material to form a plurality of second lines within the grooves which alternate with the first lines. Integrated circuitry formed according to the method, and other methods, is also disclosed.

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