Thin film transistor having a branched gate and channel

Details Thin film transistor having a branched gate and channel Thin film transistor having a branched gate and channel

1997-12-23

1999-10-12

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, H01L 2976, H01L 3162

Patent

active

059659149

ABSTRACT:
A thin-film transistor has a channel having a plurality of branch channels, and a gate having a plurality of branch gates. At least one of or all of the branch channels are surrounded by the branch gates in a three dimensional way. That is, the branch channels and the branch gates are formed so as to intersect each other in a three-dimensional space so that the branch channels are surrounded by the branch gates, and the branch gates are surrounded by the branch charnels. Consequently, the area of the channel is increased and the current capacity is enhanced. Thus, a thin-film transistor is obtained which takes a small area and has a large current capacity.

REFERENCES:
patent: 5338959 (1994-08-01), Kim et al.
patent: 5372959 (1994-12-01), Chan
patent: 5583362 (1996-12-01), Maegawa

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