Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-05-22
1999-10-12
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419225, 20429805, 20429808, 20429813, 20429815, 20429816, 20419217, C23C 1434
Patent
active
059649895
ABSTRACT:
Provided are an ionized PVD device capable of performing film formation having excellent vertical growth, and more particularly an ionized PVD device having a comparatively simple structure in which a rate of a metal film formed by neutral metal atoms can be reduced in a contact hole of a semiconductor substrate to perform film formation having excellent bottom coverage, and a method for manufacturing a semiconductor device using the ionized PVD device. Air-core coils are provided on an outside of a vacuum chamber concentrically with a central axis of the vacuum chamber and an extension axis of the central axis. The air-core coils are electromagnets for forming an S-shaped magnetic field in the vacuum chamber almost along a contour shape thereof. The air-core coils are provided so as to form the magnetic field in a straight portion in the vicinity of both ends of the vacuum chamber, and the air-core coils are provided so as to form the magnetic field in a bent portion of the vacuum chamber.
REFERENCES:
patent: 3887451 (1975-06-01), Cuomo et al.
patent: 3916034 (1975-10-01), Tsuchimoto
patent: 4867859 (1989-09-01), Harada et al.
patent: 4871433 (1989-10-01), Wagner et al.
patent: 4925542 (1990-05-01), Kidd
patent: 5126033 (1992-06-01), Szczyrbowski et al.
patent: 5302266 (1994-04-01), Grabarz et al.
patent: 5330628 (1994-07-01), Demaray et al.
patent: 5354445 (1994-10-01), Ito et al.
patent: 5433836 (1995-07-01), Martin et al.
patent: 5480527 (1996-01-01), Welty
patent: 5487822 (1996-01-01), Demaray et al.
patent: 5685960 (1997-11-01), Fu et al.
patent: 5840163 (1998-11-01), Welty
Mercado Julian A.
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Nam
LandOfFree
Ionized PVD device and method of manufacturing semiconductor dev does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ionized PVD device and method of manufacturing semiconductor dev, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ionized PVD device and method of manufacturing semiconductor dev will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-648667