Method to prepare hemi-spherical grain (HSG) silicon using a flu

Details Method to prepare hemi-spherical grain (HSG) silicon using a flu Method to prepare hemi-spherical grain (HSG) silicon using a flu

1993-12-10

1995-04-18

Nguyen, Nam

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156643, 437109, 437247, H01L 2100

Patent

active

054075343

ABSTRACT:
The present invention develops a process for forming hemi-spherical grained silicon storage capacitor plates by the steps of: forming a silicon layer over a pair of neighboring parallel conductive lines, the silicon layer making contact to an underlying conductive region; patterning the silicon layer to form individual silicon capacitor plates; exposing the silicon capacitor plates to a fluorine based gas mixture during an high vacuum annealing period, thereby transforming the silicon capacitor plates into the semi-spherical grained silicon capacitor plates; conductively doping the hemispherical grained silicon capacitor plates; forming a capacitor dielectric layer adjacent and coextensive the semispherical grained silicon capacitor plates; and forming a second conductive silicon layer superjacent and coextensive the capacitor dielectric layer.

REFERENCES:
patent: 5134086 (1992-07-01), Ahn
patent: 5162248 (1992-11-01), Dennison et al.
patent: 5170233 (1992-12-01), Liu et al.
patent: 5227322 (1993-07-01), Ko et al.
patent: 5278091 (1994-01-01), Fazan et al.
patent: 5340765 (1994-08-01), Dennison et al.

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