Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1993-03-04
1995-04-18
Powell, William
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156653, 156657, 1566611, 156904, 437229, H01L 21306, B44C 122, C03C 1500
Patent
active
054075297
ABSTRACT:
In a pattern formation method which employs a resist system of tri-level structure the present method is characterized in that it uses a fluorine contained silicon dioxide film as the intermediate film. Since this fluorine contained silicon dioxide film can be formed at a low temperature with a small volume shrinkage, it is possible to eliminate the generation of cracks and delaminations due to heat treatment. Moreover, it is possible to improve the adhesive strength between an etching object such as a noble metal film and the lower organic film since the lower organic film can be formed by heat treatment at a low temperature.
NEC Corporation
Powell William
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