Electrostatic discharge protection

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257371, 257603, 257360, H01L 2990

Patent

active

054163510

ABSTRACT:
An ESD protection diode for a CMOS or BiCMOS integrated circuit formed by imbedding a Zener diode in the drain of a MOS device used as a protection diode. The Zener diode may be formed with the preexisting process steps of a BiCMOS process, and it provides a low voltage trigger for avalanche breakdown in the MOS ESD protection diode.

REFERENCES:
patent: 4990976 (1991-02-01), Hattori
patent: 5001073 (1991-03-01), Huie
patent: 5162966 (1992-11-01), Fujihira
patent: 5204541 (1993-04-01), Smayling et al.
patent: 5235201 (1993-08-01), Honna
patent: 5272097 (1993-12-01), Shiota

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