Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-11-20
1995-05-16
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257371, 257603, 257360, H01L 2990
Patent
active
054163510
ABSTRACT:
An ESD protection diode for a CMOS or BiCMOS integrated circuit formed by imbedding a Zener diode in the drain of a MOS device used as a protection diode. The Zener diode may be formed with the preexisting process steps of a BiCMOS process, and it provides a low voltage trigger for avalanche breakdown in the MOS ESD protection diode.
REFERENCES:
patent: 4990976 (1991-02-01), Hattori
patent: 5001073 (1991-03-01), Huie
patent: 5162966 (1992-11-01), Fujihira
patent: 5204541 (1993-04-01), Smayling et al.
patent: 5235201 (1993-08-01), Honna
patent: 5272097 (1993-12-01), Shiota
Church Michael D.
Ito Akira
Harris Corporation
Limanek Robert P.
Williams Alexander Oscar
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