Increased-density flash EPROM that requires less area to form th

Details Increased-density flash EPROM that requires less area to form th Increased-density flash EPROM that requires less area to form th

1993-12-16

1995-05-16

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257322, 257752, 257382, H01L 2968

Patent

active

054163498

ABSTRACT:
A series of self-aligned, intermediate strips of conductive material are formed to contact each of the drain regions in a corresponding number of columns of drain regions in a flash electrically programmable read-only-memory (EPROM). In addition, a corresponding series of metal bit lines are formed to periodically contact the series of intermediate strips of conductive material. By utilizing intermediate strips of conductive material which are self-aligned to the drains of the memory cells of the flash EPROM, the area required for each drain contact can be significantly reduced. By then utilizing the series of metal bit lines to periodically contact the series of intermediate strips, conventional techniques can be utilized to form the metal bit lines.

REFERENCES:
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4720323 (1988-01-01), Sato
patent: 4830974 (1989-05-01), Chang et al.
patent: 5235200 (1993-08-01), Komori et al.

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