Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-10-31
1998-04-14
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, H01L 2362
Patent
active
057395705
ABSTRACT:
An integrated circuit (42) is formed in a semiconductor layer (50) having a defined area. Functional circuitry (12) is formed in semiconductor layer (50) to occupy only a portion of the defined area of semiconductor layer (50), and thus defining an unoccupied area of semiconductor layer (50). A capacitor is formed in semiconductor layer in a substantial portion of the unoccupied area.
REFERENCES:
patent: 3378915 (1968-04-01), Zenner
patent: 3638081 (1972-01-01), Lloyd
patent: 3638301 (1972-02-01), Matsuura
patent: 3999212 (1976-12-01), Usuda
Niehaus Jeffrey Alan
Ovens Kevin M.
Brady III W. James
Courtney Mark E.
Donaldson Richard L.
Meier Stephen
Texas Instruments Incorporated
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