Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-07-19
1997-07-29
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257315, 257321, 365184, 36518511, 36518512, 36518523, H01L 29788, G11C 1134
Patent
active
056524501
ABSTRACT:
According to the present invention, a nonvolatile semiconductor storage device for applying to each word line either one of a selected voltage and a non-selected voltage, corresponding to a selection state and a non-selection state, respectively, is provided. The selection state or the non-selection state is selected in accordance with an address signal in each operational mode. The nonvolatile semiconductor storage device includes: a plurality of applied voltage decoders operating in accordance with an applied voltage selection state or an applied voltage non-selection state, a plurality of control voltage decoders, each of the control voltage decoders outputting a control voltage corresponding to either a control voltage selection state or a control voltage non-selection state and a plurality of driver circuits, each of the driver circuits being provided so as to correspond to each word line; receiving a first applied voltage, a second applied voltage and a control voltage which are output from a distinct combination of an applied voltage decoder and a control voltage decoder.
REFERENCES:
Tanaka et al., "Flash memory with negative voltage scheme" Technical Report of Institute of Electronics, Information and Communication Engineers in Japan, ICD91-135 (1991) pp. 9-14.
Martin Wallace Valencia
Saadat Mahshid D.
Sharp Kabushiki Kaisha
LandOfFree
Nonvolatile semiconductor storage device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor storage device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor storage device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-635580