Method of performing plain etching treatment and apparatus there

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156345, H10L 2100

Patent

active

054157285

ABSTRACT:
Disclosed herein are a dry etching method and a dry etching apparatus. The method comprises a step of applying an etching inhibiting gas to that portion of a workpiece where etching speed is high, while the workpiece is being etched with reactive-gas plasma. The apparatus comprises functions for holding a reactive etching gas, a first electrode located within the gas-holding functions, for supporting a workpiece, a second electrode located within the gas-holding functions and spaced apart from the first electrode by a predetermined distance, functions for supplying high-frequency power, thereby to convert the reactive etching gas into a plasma in the space between the first and second electrodes, and functions for supplying an etching inhibiting gas to that portion of the workpiece where etching speed is high.

REFERENCES:
patent: 4427515 (1984-01-01), Yuhara et al.
patent: 5084126 (1992-01-01), McKee
patent: 5105761 (1992-04-01), Charlet et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of performing plain etching treatment and apparatus there does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of performing plain etching treatment and apparatus there, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of performing plain etching treatment and apparatus there will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-635560

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.