Static information storage and retrieval – Read/write circuit – Signals
Patent
1990-10-22
1991-07-09
Gossage, Glenn
Static information storage and retrieval
Read/write circuit
Signals
365200, 365210, 36523006, G11C 700, G11C 11407
Patent
active
050311514
ABSTRACT:
A semiconductor memory device is described in which wordline redundancy is implemented without impacting the access time. A redundant decoder circuit generates a wordline drive inhibit signal which inhibits the generation of a normal wordline signal. Deselection also deselects the normally accessed reference cells, requiring that the redundant cells provide their own reference signal. This last requirement is accomplished by utilization of twin cells for the redundant memory. Placing the redundant memory cells on the sense node side of the bit line isolators enables the effective doubling of the number of redundant cells available to each of a plurality of sub-arrays of normal memory.
REFERENCES:
patent: 4392211 (1983-07-01), Nakano et al.
patent: 4498154 (1985-02-01), Hoffmann
"An Analysis of the; 2164A", Mosaid Inc., Apr. 1982, pp. 5, 41-52.
Fitzgerald et al, "Circuit Implementation of Fusible Redundant Addresses on RAMs for Productivity Enhancement", IBM Journal of Research and Development, vol. 24, No. 3, May 1980, pp. 291-295.
Tolley et al, "72K RAM Stands Up to Soft and Hard Errors", Electronics, vol. 55, No. 12, Jun. 16, 1982, pp. 147-151.
Fifield John A.
Kalter Howard L.
Miller Christopher P.
Thomashot Steven W.
Gossage Glenn
International Business Machines - Corporation
Walter, Jr. Howard J.
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