Oxide masking of gallium arsenide

Details Oxide masking of gallium arsenide Oxide masking of gallium arsenide

1978-10-31

1980-10-07

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148187, 156657, 156662, 156667, 204 56R, H01L 21308

Patent

active

042266670

ABSTRACT:
The use of gallium arsenide as an electronic material is increasing in popularity. However, its utility for planar MOS technology is hindered by the fact that its native oxide stabilizes upon heating and becomes etch resistant. I have discovered that it is the vaporization of arsenic containing compounds in the oxide which renders the oxide insoluble. A technique is described wherein an inert capping layer is disposed on a layer of the native oxide prior to heat exposure. This prevents evaporation of arsenic, and both the capping layer and the oxide are capable of subsequent dissolution in a weak acid or base.

REFERENCES:
patent: 3856588 (1974-12-01), Hashimoto et al.
patent: 3890169 (1975-06-01), Schwartz
patent: 4055443 (1977-10-01), Stepanovich et al.
patent: 4058413 (1977-11-01), Welch et al.
patent: 4116722 (1978-08-01), Kamei et al.
Ishii et al., "Influence . . . GaAs", Journal of Electrochem. Society, vol. 124, No. 11 (11/77), pp. 1784-1794.
Hunsperger, "Ion Implanted . . . GaAs", Solid State Electronics, vol. 18, pp. 349-353 (1975).

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