Methods of manufacturing compound semiconductor crystals and app

Details Methods of manufacturing compound semiconductor crystals and app Methods of manufacturing compound semiconductor crystals and app

Filed on

1986-09-18

Date issued

1991-07-09

Examiner

Sneed, H. M. S.

Patent Class

Adhesive bonding and miscellaneous chemical manufacture

SubClass

Delaminating processes adapted for specified product

SubSubClass

Delaminating in preparation for post processing recycling step

Other Related Categories

1566202, 156DIG70, 156601, C30B 1502

Type

Patent

Status

active

Patent number

050303155

Description

ABSTRACT:
A method of manufacturing compound semiconductor crystals, comprising the steps of, providing a compound semiconductor melt in a crucible, said melt having a composition ratio which deviates from stoichiometry, pulling a compound semiconductor crystal from said crucible by using a seed crystal, and during the pulling step, adding to the melt a constitutional element of said compound semiconductor melt which is present in less than a stoichiometric amount, the element being added in a quantity sufficient to maintain said composition ratio of the first step. An apparatus for manufacturing compound semiconductor crystals is also provided.

REFERENCES:
patent: 2892739 (1959-06-01), Rusler
patent: 2898249 (1959-08-01), Jensen
patent: 3198606 (1965-08-01), Lyons
patent: 4028058 (1977-06-01), Beinert et al.
patent: 4528061 (1985-07-01), Miyazawa et al.
patent: 4594173 (1986-06-01), Hobgood et al.
patent: 4618396 (1986-10-01), Shimoda et al.
Steinemann et al., "Growth Peculiarities of Gallium Arsenide Single Crystals", Sol. State Electronics, vol. 6, pp. 597-604, 1963.

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