Diode and metal stud therefor

Details Diode and metal stud therefor Diode and metal stud therefor

1986-03-13

1988-07-19

James, Andrew J.

357 73, 357 67, 357 65, H01L 2946, H01L 2354, H01L 21447

Patent

active

047588748

ABSTRACT:
A diode according to the invention comprises an electrically insulating envelope (2), within which a wafer (1) of semiconductor material with a pn junction is enclosed between metal studs (3,4). The metal studs (3,4) are sinter bodies mainly comprising tungsten, a sintering activator and a material chosen from the group comprising Y.sub.2 O.sub.3, SiO.sub.2, Al.sub.2 O.sub.3, ZrO.sub.2 and ThO.sub.2. The metal studs (3,4) can be manufactured at a comparatively low temperature and nevertheless have a very high density and a very great strength as well as a fine structure.

REFERENCES:
patent: 3698055 (1972-10-01), Holtz, Jr. et al.
patent: 3927815 (1975-12-01), Mase et al.
patent: 3996602 (1976-12-01), Goldberg
patent: 4485150 (1984-11-01), Tsuno

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