Semiconductor substrate with electrical contact in groove

Details Semiconductor substrate with electrical contact in groove Semiconductor substrate with electrical contact in groove

1994-11-17

1995-10-17

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257508, 257520, 257774, 257768, H01L 21782, H01L 2712, H01L 2906

Patent

active

054593468

ABSTRACT:
A semiconductor substrate comprises a foundation, a semiconductor monocrystalline film formed on the foundation, and a high-melting-point metal film or a high-melting-point metal alloy film disposed in at least part of a region between the semiconductor monocrystalline film and the foundation. The high-melting-point metal film disposed below the semiconductor monocrystalline film can be utilized as a conductor in a semiconductor device.

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