Transistor with inverse silicide T-gate structure

Details Transistor with inverse silicide T-gate structure Transistor with inverse silicide T-gate structure

1993-07-26

1994-03-01

Wojciechowicz, Edward

Fishing, trapping, and vermin destroying

437193, 437200, 437233, 437235, 437913, 437984, 257328, 257336, 257377, 257382, 257755, 257773, H01L 21265, H01L 2904

Patent

active

052907201

ABSTRACT:
A method of making a silicided inverse T-gate with an L-shaped silicon spacer and nitride sidewall spacers is described. The L-shaped spacer is electrically connected to the gate.

REFERENCES:
patent: 4868617 (1989-09-01), Chiao et al.
IEDM, "The Impact of Gate-Drain Overlapped LDD (Gold) for Deep Submicron VLSIs," by R. Izawa, et al., pp. 38-41, 1987.
1990 Symposium on VLSI Technology, "A Highly Reliable 0.3 uM N-channel MOSFET Using Poly Spacers," Chen et al., pp. 39-40.
IEDM, "A Self-Aligned Inverse-T Gate Fully Overlapped LDD Device for Sub-Half Micron CMOS," D. S. Wen et al., pp. 765-768, 1989.

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