Programmable non-volatile memory cell

Details Programmable non-volatile memory cell Programmable non-volatile memory cell

1994-11-23

1998-05-05

Nguyen, Viet Q.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257312, 257296, 257298, 257300, 3651851, H01L 2710

Patent

active

057478465

ABSTRACT:
A non-volatile memory cell having a structure having improved integration and simplified electrode wiring structure. The programmable non-volatile memory cell of the present invention adopts a mono-layer gate scheme to simplify the electrode wiring structure and to eliminate a current leakage problem of an insulating film between electrodes. A side and bottom of a semiconductor region, which is disposed directly below a capacity electrode section with a gate insulating film interposed therebetween that compose a control electrode, are isolated from another semiconductor region and semiconductor substrate by insulating films. Thus, a high programming control voltage which is not limited by a junction yield voltage between the semiconductor regions and semiconductor substrate may be applied. Due to that, an area of the capacity electrode section of a floating electrode may be considerably reduced.

REFERENCES:
patent: 4616245 (1986-10-01), Topich et al.
patent: 5078498 (1992-01-01), Kadakia et al.
patent: 5086325 (1992-02-01), Schumann et al.
patent: 5355330 (1994-10-01), Hisamoto et al.

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