Memory data protection for a ferroelectric memory

Details Memory data protection for a ferroelectric memory Memory data protection for a ferroelectric memory

1995-10-27

1996-11-12

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

326105, G11C 1122

Patent

active

055746799

ABSTRACT:
A nonvolatile ferroelectric memory device comprises a power supply and a memory cell array having a plurality of memory cells arranged in rows and columns and further comprises a plate-voltage level generator, a power supply voltage detector, and a protective control circuit. The plate-voltage level generator generates a plate voltage on a plate line connected to the one electrode of a ferroelectric capacitor of each memory cell. The power supply voltage detector detects a voltage of the power supply to generate a low-voltage detection signal when the power supply voltage is lower than a threshold voltage. The protective control circuit responsive to the low-voltage detection signal fixes the word lines at a grounding voltage level so as to protect the ferroelectric capacitor from a voltage change of the word line. The protective control circuit may fix the bit lines at the plate voltage level when the power supply voltage is lower than the threshold voltage.

REFERENCES:
patent: 5297077 (1994-03-01), Imai et al.
patent: 5307304 (1994-04-01), Saito et al.
patent: 5331601 (1994-07-01), Parris
patent: 5365482 (1994-11-01), Nakayama
"A 256 kb Nonvolatile Ferroelectric Memory at 3V and 100 ns", ISSCC94, Session 16, Technology Directions; Memory, Packaging Paper FA 16.2, Feb. 1994 IEEE International Solid-State Circuits Conference, pp. 268-269, 350.

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