Semiconductor device having capacitor exhibiting improved mositu

Details Semiconductor device having capacitor exhibiting improved mositu Semiconductor device having capacitor exhibiting improved mositu

1998-05-04

2000-01-18

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257307, 257501, 257506, 257508, 257758, 257760, H01L 27108, H01L 2976, H01L 2994, H01L 2900

Patent

active

060159871

ABSTRACT:
A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.

REFERENCES:
patent: 4772985 (1988-09-01), Yasumoto et al.

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