Manufacturing method of a semiconductor device

Details Manufacturing method of a semiconductor device Manufacturing method of a semiconductor device

1996-11-04

2000-01-18

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438156, 438585, H01L 2100

Patent

active

060157240

ABSTRACT:
After a contact hole for an aluminum gate electrode is formed, a nickel film is formed by electroless plating, and coincidently, a natural oxide film formed on the gate electrode is removed by wet etching. This provides a reliable contact between the gate electrode and an external lead-out wiring line.

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patent: 4465561 (1984-08-01), Nguyen
patent: 5440239 (1995-08-01), Zappella
patent: 5639344 (1997-06-01), Konuma
patent: 5686328 (1997-11-01), Zhang et al.
patent: 5736434 (1998-04-01), Konuma et al.
Wolf, Stanley "Silicon Processing For The VLSI Era vol. 2: Process Integration", Lattice Press, pp. 240-258, 1990.

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