Semiconductor memory device operating at a low level power suppl

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

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36518909, 36518911, G11C 700

Patent

active

060882751

ABSTRACT:
A semiconductor memory device having: a pair of bit signal lines; a sense amplifier disposed between the pair of bit signal lines; a ground potential side transistor inserted between the sense amplifier and a ground potential; and a power supply potential side transistor circuit inserted between the sense amplifier and a power supply potential network. When the ground potential side transistor is turned ON, one of the pair of bit signal lines which is closer to the ground potential is pulled into the ground potential via the sense amplifier, and when the power supply potential side transistor circuit is turned ON, the other one of the pair of bit signal lines which is closer to the power supply potential is pulled into the power supply potential via the sense amplifier, thereby amplifying a potential difference between the pair of bit signal lines.

REFERENCES:
patent: 5544110 (1996-08-01), Yuh
patent: 5646880 (1997-07-01), Yuh
patent: 5657278 (1997-08-01), Lee
patent: 5719814 (1998-02-01), Ishikawa
patent: 5745423 (1998-04-01), Tai

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