Semiconductor integrated circuit, method of fabricating the same

Details Semiconductor integrated circuit, method of fabricating the same Semiconductor integrated circuit, method of fabricating the same

1996-07-01

1998-03-31

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257390, 257635, H01L 2976, H01L 2994, H01L 31062, H01L 3119

Patent

active

057341885

ABSTRACT:
A semiconductor integrated circuit comprising first n-channel MISFETs constituting the memory cells of a storage system, second n-channel MISFETs constituting the peripheral circuits of the storage system, and third n-channel MISFETs constituting the output circuit among the peripheral circuits. The respective threshold voltages of the first n-channel MISFETs, the second n-channel MISFETs and the third n-channel MISFETs are decreased in that order when the respective gate lengths of those MISFETs are substantially the same.

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