Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-06-18
2000-07-11
Krynski, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438743, 438717, 438950, 216 49, H01L 21302, H01L 21461
Patent
active
060872705
ABSTRACT:
The invention includes methods of patterning substrates. In one implementation, an electrically conductive etch mask layer is formed over a substrate. A resist layer, for example photoresist, is formed over the etch mask layer. The etch mask layer is etched into through an opening formed in the patterned resist. The etching preferably comprises dry etching within a dual source, high density plasma etcher using an oxygen containing gas. Substrate layers beneath the electrically conductive base layer are preferably etched through one or more openings formed in the conductive layer at least in part by the preferred dry etching. The etch mask layer and resist are ultimately removed from the substrate.
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Donohoe Kevin G.
Reinberg Alan R.
Vaartstra Brian A.
Krynski William
Micro)n Technology, Inc.
Shewareged B.
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