Method for manufacturing modified T-shaped gate electrode

Details Method for manufacturing modified T-shaped gate electrode Method for manufacturing modified T-shaped gate electrode

1997-12-17

2000-07-11

Smith, Matthew

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

257 66, 257280, 257413, 257472, 438761, H01L 2144

Patent

active

06087256&

ABSTRACT:
In a method for manufacturing a semiconductor device, an insulating layer is formed on a semiconductor substrate, and a refractory metal is formed layer on the insulating layer. Then, a first opening is perforated in the refractory metal layer, and a part of the insulating layer is etched by using the refractory metal as a mask. Then, a second opening is perforated in the refractory metal layer. The second opening is superposed onto the first opening and is larger than the first opening. Then, the insulating layer is again etched by using the refractory metal layer as a mask, so that a T-shaped opening is perforated in the insulating layer. Finally, a modified T-shaped gate metal electrode is formed on the insulating layer having the T-shaped opening.

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