Semiconductor ROM cell programmed using source mask

Details Semiconductor ROM cell programmed using source mask Semiconductor ROM cell programmed using source mask

1992-06-22

1993-04-06

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257391, 365104, H01L 2978, H01L 2710, H01L 2906

Patent

active

052008029

ABSTRACT:
ROM cell programmed ON has N+ source implant spaced a given distance from the gate with LDD bridging the gap between the N+ source and the N channel. ROM cell programmed OFF has P+ implanted into this gap so as to completely override the LDD in this gap. The P+ prevents the N channel from forming ohmic connection to the N+ source.

REFERENCES:
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patent: 4356041 (1982-10-01), Kosa
patent: 4358889 (1982-11-01), Dickman et al.
patent: 4395725 (1983-07-01), Parekh
patent: 4420871 (1983-12-01), Scheibe
patent: 4513494 (1985-04-01), Batra
patent: 4603468 (1986-08-01), Lam
patent: 4649629 (1987-03-01), Miller et al.
patent: 4694566 (1987-09-01), Conner et al.
patent: 4775642 (1988-10-01), Chang et al.
patent: 4845045 (1989-07-01), Shacham et al.

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