Process of forming a refractory metal thin film

Details Process of forming a refractory metal thin film Process of forming a refractory metal thin film

1995-12-21

1998-05-05

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438688, 438695, 438656, H01L 2144

Patent

active

057473846

ABSTRACT:
A process for forming a refractory metal thin film on a substrate by subjecting a gaseous mixture containing a halide of a refractory metal and the hydrogen gas to a plasma chemical vapor deposition, comprising the step of adjusting a mixing ratio of the halide of the refractory metal to the hydrogen gas to a relatively small value at an initial stage of the process and, subsequent to the initial stage of the process, adjusting the mixing ratio of the halide of the refractory metal to the hydrogen gas to a relatively large value.

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patent: 4361599 (1982-11-01), Wourms
patent: 5162262 (1992-11-01), Ajika et al.
patent: 5238872 (1993-08-01), Thalapaneni
patent: 5403434 (1995-04-01), Moslehi
patent: 5443995 (1995-08-01), Nulman
patent: 5459353 (1995-10-01), Kanazawa
patent: 5523259 (1996-06-01), Merchant et al.
patent: 5567243 (1996-10-01), Foster et al.

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