Plasma etching

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156646, 204192E, 204298, 252 791, C23F 102

Patent

active

040736695

ABSTRACT:
Aluminum films on a semiconductor surface are etched in a carbon tetrachloride glow discharge. Typical etch rates are 2000-3000 A/min. The addition of 15% ammonia to the plasma prevents HCl formation when the etched material is exposed to air.
This process provides a more easily controlled process for the manufacture of high density integrated circuits.

REFERENCES:
patent: 3620957 (1971-11-01), Crawley et al.
patent: 3860507 (1975-01-01), Vossen
patent: 3975252 (1976-08-01), Fraser et al.

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