Static random access memory cell having a field region

Details Static random access memory cell having a field region Static random access memory cell having a field region

1997-11-26

2000-02-22

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257379, 257903, 365174, H01L 2711

Patent

active

060283408

ABSTRACT:
A static random access memory (SRAM) cell includes first and second load devices, first and second access transistors, first and second drive transistors, and two bit lines. The SRAM includes a substrate; an active region in the substrate, the active region being formed in a direction; gate electrodes of the first and second access transistors crossing the active region, the gate electrodes of the first and second access transistors are parallel with each other; gate electrodes of the first and second drive transistors crossing the active region, the gate electrodes of the first and second drive transistors are parallel with each other, and first and second load devices on the gate electrodes of the first and second access transistors, the first and second load devices are parallel with each other.

REFERENCES:
patent: 5354704 (1994-10-01), Yang et al.
patent: 5366918 (1994-11-01), Yang
patent: 5379251 (1995-01-01), Takeda et al.
patent: 5461251 (1995-10-01), Yang et al.

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