Process for forming a gate-quality insulating layer on a silicon

Details Process for forming a gate-quality insulating layer on a silicon Process for forming a gate-quality insulating layer on a silicon

1996-12-04

2000-02-22

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438778, H01L 2978

Patent

active

060280123

ABSTRACT:
A method of fabricating a semiconductor structure involving the steps of providing a SiC substrate, treating the SiC substrate with an N.sub.2 O-containing plasma, and forming a dielectric layer on the surface of the pretreated SiC substrate. A semiconductor structure produced by the method above. An apparatus for forming a dielectric layer on a SiC substrate including a deposition chamber in which the SiC substrate is placed, a first valve that connects a first source providing N.sub.2 O to the deposition chamber, a second valve that connects a second source providing reactants that form the dielectric layer to the deposition chamber, an energy source for producing an N.sub.2 O-containing plasma from N.sub.2 O released from the first source by the first valve, and a controller that programs providing power to the energy source and opening and closing the first and second valves into two phases. A first phase in which power is provided to the energy source, the first valve is kept open, and the second valve is kept closed so that the SiC substrate can be pretreated with N.sub.2 O-containing plasma. The first phase is followed by a second phase in which the second valve is kept open so that the dielectric layer can be formed.

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