Method of making a silicide semiconductor device with junction b

Details Method of making a silicide semiconductor device with junction b Method of making a silicide semiconductor device with junction b

1997-09-22

2000-02-22

Tsai, Jey

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438564, 438586, 438596, 438597, 438639, 438642, H01L 2122

Patent

active

060279915

ABSTRACT:
A method of making a semiconductor device includes a semiconductor substrate, an impurity doped region formed in the semiconductor substrate, an insulating layer formed on the semiconductor substrate having an opening leading to the impurity doped region, a polycrystalline silicon layer formed on the insulating layer and the impurity doped region, and a metal silicide layer formed on the polycrystalline silicon layer. A transverse thickness of the polycrystalline silicon layer at a sidewall of the insulating layer is larger than a longitudinal thickness of the polycrystalline silicon layer at a bottom of the opening and at a surface of the insulating layer.

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