Semiconductor nonvolatile memory device and method of production

Details Semiconductor nonvolatile memory device and method of production Semiconductor nonvolatile memory device and method of production

1998-11-09

1999-12-21

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 20, 257 30, 257 43, 257316, 257321, 257337, 257390, 257401, H01L 2972

Patent

active

060052708

ABSTRACT:
A semiconductor nonvolatile memory device capable of lowering an operation voltage such as an erase voltage and capable of lowering costs and a method of production of the same, wherein a thin film transistor acting as the memory transistor is formed with a semiconductor layer 31b having a channel formation region formed on an insulating substrate 10 made of glass or plastic, a charge storing layer 32a formed on the semiconductor layer, a control gate 33a formed above the charge storing layer, and source and drain regions formed connected to the channel formation region.

REFERENCES:
patent: 5691552 (1997-11-01), Oyama

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