Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-01-15
1992-12-01
Fears, Terrell W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
365203, 365185, 365900, 257321, G11C 1300, H01L 2701
Patent
active
051684659
ABSTRACT:
Structures, methods of manufacturing and methods of use of electrically programmable read only memories (EPROM) and flash electrically erasable and programmable read only memories (EEPROM) include split channel and other cell configurations. An arrangement of elements and cooperative processes of manufacture provide self-alignment of the elements. An intelligent programming technique allows each memory cell to store more than the usual one bit of information. An intelligent erase algorithm prolongs the useful life of the memory cells. Use of these various features provides a memory having a very high storage density and a long life, making it particularly useful as a solid state memory in place of magnetic disk storage devices in computer systems.
REFERENCES:
patent: 4328565 (1982-05-01), Harari
patent: 4331968 (1982-05-01), Gosney, Jr. et al.
patent: 4361847 (1982-11-01), Harari
patent: 4377818 (1983-03-01), Kuo et al.
patent: 4412311 (1983-10-01), Miccoli et al.
patent: 4422092 (1983-12-01), Guterman
patent: 4462090 (1984-06-01), Iizuka
patent: 4486769 (1984-12-01), Simko
patent: 4503519 (1985-03-01), Arakawa
patent: 4531203 (1985-07-01), Masuoka et al.
patent: 4561004 (1985-12-01), Kuo et al.
patent: 4577215 (1986-03-01), Stewart et al.
patent: 4639893 (1987-01-01), Eitan
patent: 4665417 (1987-05-01), Lam
patent: 4717943 (1988-01-01), Wolf et al.
patent: 4763299 (1988-08-01), Hazani
patent: 4794565 (1988-12-01), Wu et al.
patent: 4803529 (1989-02-01), Masuoka
patent: 4852062 (1989-07-01), Baker et al.
patent: 4935378 (1990-06-01), Mori
Sang U. Kim, "A Very Small Schottky Barrier Diode (SDB) with Self-Aligned Guard Ring for VLSI Applications", 1979 IEDM Technical Digest, pp. 49-53.
J. Kupec et al., "Triple Level Polysilicon EEprom with Single Transistor per Bit", 1980 IEDM Technical Digest, pp. 602-606.
S. Meguro et al., "Hi-CMOS III Technology", 1984 IEDM Technical Digest, pp. 59-62.
S. Tanaka et al., "A Programmable 256K CMOS EPROM with On-Chip Test Circuits", 1984 ISSCC Digest of Technical Papers, pp. 148-149.
H. A. R. Wegener, "Endurance Model for Textured-Poly Floating Gate Memories", Technical Digest of the IEEE International Electron Device Meeting, Dec. 1984, pp. 480-483.
Y. Mizutani and K. Makita, "A New EPROM Cell with a Side-Wall Floating Gate for High-Density and High-Performance Device", 1985 IEDM Technical Digest, pp. 635-638.
F. Masuoka et al., "A 256K Flash EEPROM Using Triple Polysilicon Technology", Digest of Technical Papers, IEEE International Solid-State Circuits, Feb. 1985, pp. 168-169, 335.
A. T. Wu et al., "A Novel High-Speed, 5-Volt Programming EPROM Structure with Source-Side Injection", 1986 IEDM Technical Digest, pp. 584-587.
G. Samachisa et al., "A 128K Flash EEPROM Using Double-Polysilicon Technology", IEEE Journal of Solid State Circuits, Oct. 1987, vol. SC-22, No. 5, pp. 676-683.
H. Kume et al., "A Flash-Erase EEPROM Cell with an Asymmetric Source and Drain Structure", Technical Digest of the IEEE International Electron Devices Meeting, Dec. 1987, pp. 560-563.
V. N. Kynett et al., "An In-System Reprogrammable 256K CMOS Flash Memory", Digest of Technical Papers, IEEE International Solid-State Circuits Conference, Feb. 1988, pp. 132-133, 330.
M. Horiguchi et al., "An Experimental Large-Capacity Semiconductor File Memory Using 16-Levels/Cell Storage", IEEE Journal of Solid-State Circuits, vol. 23, No. 1, Feb. 1988, pp. 27-33.
T. Furuyama et al., "An Experimental 2-Bit/Cell Storage DRAM for Macro Cell or Memory-on-Logic Application", IEEE Custom Integrated Circuits Conference, May 1988, pp. 4.4.1-4.4.4.
Muller et al., "Electrically Alterable 8192 Bit N-Channel MOS PROM", 1977 IEEE International Solid-State Circuits Conference, Feb. 18, 1977, pp. 188-189.
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