Method for fabricating devices with DC bias-controlled reactive

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

204192R, 204192EC, 204298, 156345, 156643, C23C 1500

Patent

active

044964480

ABSTRACT:
A method and apparatus for fabricating a device is disclosed, which method involves a new reactive ion etching technique. Both a high etch rate and, for example, a high etch selectivity are simultaneously achieved with the inventive reactive ion etching technique by discharging an electrode of the reactive ion etching apparatus in response to a preselected criterion, e.g., a magnitude of a DC bias at said electrode which equals, or exceeds, a preselected value.

REFERENCES:
patent: 3664942 (1972-05-01), Havas et al.
patent: 3708418 (1973-01-01), Quinn
patent: 3730873 (1973-05-01), Pompei et al.
patent: 3816198 (1974-06-01), La Combe et al.
patent: 4233515 (1980-11-01), Dietrich et al.
patent: 4283260 (1981-08-01), Thomas et al.
patent: 4312732 (1982-01-01), Degenkolb et al.
patent: 4333814 (1982-06-01), Kuyel
patent: 4340456 (1982-07-01), Robinson et al.
patent: 4357195 (1982-11-01), Gorin
patent: 4362611 (1982-12-01), Logan et al.
patent: 4422897 (1983-12-01), Horwitz
Geipel IBM Technical Disclosure Bulletin 20 (1977), pp. 541-542.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for fabricating devices with DC bias-controlled reactive does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating devices with DC bias-controlled reactive , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating devices with DC bias-controlled reactive will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-505390

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.