Process for forming an improved silicon-on-sapphire device

Details Process for forming an improved silicon-on-sapphire device Process for forming an improved silicon-on-sapphire device

1982-06-30

1985-01-29

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156649, 156653, 156DIG111, C23F 100

Patent

active

044964188

ABSTRACT:
A novel process is described for the removal of the objectionable point (tilt projection, appearing at the top of a silicon island). The process includes the formation of a thick insulating layer on the top surface of the island, etching the top and sides of the insulating layer to expose, at the least, the objectionable point and, thereafter, etching the objectionable point to produce a rounded edge.

REFERENCES:
patent: 3980508 (1976-09-01), Takamiya et al.
patent: 4070211 (1978-01-01), Harari
patent: 4277884 (1981-07-01), Hsu
Armstrong et al., Vacuum, vol. 33, No. 5, pp. 291-294, 1983.
"The Study of Microcircuits by Transmission Electron Microscopy", W. E. Ham et al., RCA Review, vol. 38, Sep. 1977, pp. 351-389.

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