Patent
1988-03-25
1991-03-05
357 234, 357 86, 357 43, H01L 2702
Patent
active
049981560
ABSTRACT:
The present invention is a complementary-symmetry COMFET pair consisting of an N-channel lateral COMFET and a P-channel lateral COMFET interconnected in parallel on the same chip. The device is formed in a layer of single-crystalline silicon of one conductivity type with one of the pair of COMFETs being formed directly in this layer. A well of opposite conductivity type is disposed in the layer and the other of the pair of COMFETs is disposed in the well. The two COMFETs are isolated from each other by a highly doped region which extends from the surface of the layer to the substrate and is of the same conductivity type as that of the substrate.
REFERENCES:
patent: 4364963 (1982-12-01), Becke et al.
patent: 4712124 (1987-12-01), Stupp
patent: 4729007 (1988-03-01), Coe
patent: 4878096 (1989-10-01), Shirai et al.
M. R. Simpson et al., "Analysis of the Lateral Insulated Gate Transistor", IEDM Tech. Dig., (1985), pp. 740-743.
A. L. Robinson et al., "Lateral Insulated Gate Transistors with Improved Latching Characteristics," IEDM Tech. Dig., (1985), pp. 744-747.
S. Mukherjee et al., "Influence of Device Structure on the Transient and Steady State Characteristics of LIGT," Philips Laboratories, North American Philips Corp., May 1987, pp. 310-317.
Dolny Gary M.
Goodman Alvin M.
Davis Jr. James C.
General Electric Company
Webb II Paul R.
Wojciechowicz Edward J.
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