Semiconductor memory capable of improving data rewrite speed

Details Semiconductor memory capable of improving data rewrite speed Semiconductor memory capable of improving data rewrite speed

1991-01-28

1991-12-24

Bowler, Alyssa H.

Static information storage and retrieval

Read/write circuit

Data refresh

36518901, G11C 700, G11C 11419

Patent

active

050758870

ABSTRACT:
A semiconductor memory device is disclosed which comprises, as shown in FIG. 1, a pair of column lines, memory cells connected to the corresponding column lines, a sense amplifier connected to the column lines, row lines for selecting the memory cells in accordance with a row address signal, and first and second transistors having their current paths connected between the column lines and a fixed potential supply terminal supplied with a positive power source potential or a ground potential, wherein the gates of the first and second transistors are connected to the first and second row lines for a data rewrite operation which can be selected independently of the row line.

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