Solid state devices produced by organometallic plasma developed

Details Solid state devices produced by organometallic plasma developed Solid state devices produced by organometallic plasma developed

1981-04-22

1983-08-02

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430 17, 430 18, 430321, 430325, 430967, 430271, 430281, 427 431, 427 531, 156643, 1566591, G03C 500, G03C 524, H05K 300

Patent

active

043967043

ABSTRACT:
Solid state devices are produced by dry etching of a resist film to produce a negative resist pattern. The film comprises a polymer typically containing a halogen, and at least one type of silicon-containing or nonsilicon-containing organometallic monomer. The radiation, typically X-ray radiation, locks the monomer or monomers into the polymer, with a subsequent fixing step removing the unlocked monomer or monomers in the unirradiated portion of the resist. The film is then exposed to a plasma comprising oxygen, which removes the unirradiated portion at a faster rate than the radiated portion, producing a negative resist pattern. The plasma development is typically accomplished by reactive ion etching. Sensitizers can be used to extend the wavelength response of the films, typically into the ultraviolet or visible regions.

REFERENCES:
patent: 3782940 (1974-01-01), Ohto et al.
patent: 3809686 (1974-05-01), Chandross et al.
patent: 3899338 (1975-08-01), Lewis
patent: 4061829 (1977-12-01), Taylor
patent: 4232110 (1980-11-01), Taylor
patent: 4235958 (1980-11-01), Barrand et al.
patent: 4278753 (1981-07-01), Lewis et al.
patent: 4307178 (1981-12-01), Kaplan et al.
patent: 4329418 (1982-05-01), Khy et al.
patent: 4332879 (1982-06-01), Pastor et al.
patent: 4347304 (1982-08-01), Sakurai et al.
"X-Ray Resist Materials", Taylor, G. N., Solid State Technology, May 1980, pp. 73-80.
"Lithography with New Metallo-Organic Photoresists", Pastor, A.C. et al., Thin Solid Films, vol. 67, 1980, pp. 9-12.
"Dry Development of Resists Exposed to Focussed Gallium Ion Beam", Kuwano, H., et al., Japanese Journal of Applied Physics, vol. 19, #10, 10/80, pp. L615-L617.
"Oxygen Plasma Removal of Thin Polymer Films", Taylor, G. N. et al., Polymer Eng. & Science, 1980, vol. 20, No. 16, pp. 1087-1092.

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