Process for removing a liquid phase epitaxial layer from a wafer

Details Process for removing a liquid phase epitaxial layer from a wafer Process for removing a liquid phase epitaxial layer from a wafer

1982-03-22

1983-02-08

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148171, 156662, 252 791, H01L 21312, B44C 122

Patent

active

043728081

ABSTRACT:
A process for removing a liquid phase epitaxial layer of material from a wafer substrate is disclosed. An etch melt is provided which is substantially the same as that used to grow the epitaxial layer on the wafer surface. The temperature of the etch melt is adjusted such that it exceeds an equilibrium temperature of the epitaxial layer, and lies below an equilibrium temperature of the substrate, such that the epitaxial layer is etched away without affecting the substrate material. The wafer is immersed and maintained within the melt until the epitaxial layer is removed. The wafer may then be reused without repolishing.

REFERENCES:
patent: 3808068 (1974-04-01), Johnson et al.
patent: 3891478 (1975-06-01), Ladany et al.
patent: 4290843 (1981-09-01), Korenstein et al.

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