Method for manufacturing liquid crystal display apparatus with d

Details Method for manufacturing liquid crystal display apparatus with d Method for manufacturing liquid crystal display apparatus with d

1997-06-23

1999-08-24

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438151, 438158, 438159, H01L 2100

Patent

active

059435593

ABSTRACT:
In a method for manufacturing a liquid crystal display apparatus, a gate electrode is formed on an insulating substrate, and a gate insulating layer is formed on the gate electrode. Then, a semiconductor active layer is formed on the gate insulating layer. Then, a metal silicide layer is formed on the semiconductor active layer by using a sputtering process, and a metal layer is formed on the metal silicide layer. Then, the metal layer is etched by a dry etching process using a mask, an the metal silicide layer is etched by a wet etching process using the same mask. Finally, the semiconductor active layer is etched by using the metal layer as a mask.

REFERENCES:
patent: 5028551 (1991-07-01), Dohjo et al.
patent: 5334544 (1994-08-01), Matsuoka et al.
patent: 5427962 (1995-06-01), Sasaki et al.
patent: 5821622 (1998-10-01), Tsuji et al.

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