Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1985-02-13

1987-04-28

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29576W, 29580, 29591, 156648, 156653, 156657, 1566591, 156662, 357 44, 357 55, 357 59, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

046612025

ABSTRACT:
A method of manufacturing a semiconductor device has the steps of forming at least one groove in a semiconductor substrate having at least one well in a surface region thereof, forming an insulating film on the overall surface of the semiconductor substrate including an inner surface of the groove, selectively etching the insulating film so as to leave the insulating film in the groove, and burying a conductive material in the groove whose inner surface is covered with the remaining insulating film so as to form a conductive layer which is connected to at least one member selected from the group consisting of the well and the semiconductor substrate, and to a power supply.

REFERENCES:
patent: 4353086 (1982-10-01), Jaccodine et al.
patent: 4454646 (1984-06-01), Joy et al.
patent: 4477310 (1984-10-01), Park et al.
patent: 4520552 (1985-06-01), Arnould et al.

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