Semiconductors with protective layers

Details Semiconductors with protective layers Semiconductors with protective layers

1993-12-20

1995-09-05

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257642, 257659, H01L 2906

Patent

active

054480957

ABSTRACT:
A combination of layers protects a semiconductor device from electrostatic discharge during dicing. A polymer layer coats the device, wherein the polymer layer has an aluminum layer on its outer surface and wherein the aluminum layer electrically connects the wire bonding pads of the device.

REFERENCES:
patent: 3356858 (1967-12-01), Wanlass
patent: 3887993 (1975-06-01), Okada et al.
patent: 4169270 (1979-09-01), Hayes
patent: 4328262 (1982-05-01), Kurahashi et al.
patent: 4785338 (1988-11-01), Kinoshita et al.
patent: 4835592 (1989-05-01), Zommer
patent: 5047711 (1991-09-01), Smith et al.
S. Picard, "Field-Effect Transistor Protection Method", IBM Technical Disclosure Bulletin, vol. 15 (Jun. 1972) p. 245.
S. M. Sze, Semiconductor Device Physics and Technology, John Wiley & Sons, New York (1985) p. 344.

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