Vapor-phase film growth apparatus and gas ejection head

Coating apparatus – Gas or vapor deposition

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

239423, 239432, 239433, 239434, C23C 1600

Patent

active

061325120

ABSTRACT:
A vapor-phase film growth apparatus includes a substrate holder for holding a substrate, a gas ejection head, and a radiant heat shield device. The substrate holder has a substrate heater therein, and the gas ejection head has a gas injection surface for ejecting a material gas toward a substrate held by the substrate holder. The radiant heat shield device is disposed between the substrate holder and the gas injection head in confronting relationship to the gas injection surface of the gas ejection nozzle. The substantially planar radiant heat shield device is permeable to gases and has a heating capability.

REFERENCES:
patent: 1437201 (1922-11-01), Schumann
patent: 3916822 (1975-11-01), Robinson
patent: 4304549 (1981-12-01), Pfau
patent: 4407456 (1983-10-01), Daniel et al.
patent: 5532190 (1996-07-01), Goodyear et al.
patent: 5728223 (1998-03-01), Murakami et al.
patent: 5829683 (1998-11-01), Beaudoin et al.
patent: 5950646 (1999-09-01), Horie et al.
patent: 5950925 (1999-09-01), Fukunaga et al.
"Supersonic Reactive Gas Jet Chemical Processing", IBM Technical Disclosure Bulletin, vol. 35, No. 2, Jul. 1, 1992, p. 402/403 XP000313336.
Morio Tsuge et al., "Mechanical Thermodynamics", pp. 162-169, Asakura Shoten, Nov. 1967, Japan.
New U.S. Patent Application filed Jan. 8, 1998, entitled "Vapor Feed Supply System", by Kuniaki Horie et al., Atty. Docket No. 1213/GEB614US.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Vapor-phase film growth apparatus and gas ejection head does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vapor-phase film growth apparatus and gas ejection head, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vapor-phase film growth apparatus and gas ejection head will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-464466

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.