Method of making silicon device with uniformly thick polysilicon

Details Method of making silicon device with uniformly thick polysilicon Method of making silicon device with uniformly thick polysilicon

1977-05-18

1979-12-18

Smith, John D.

Coating processes

Measuring, testing, or indicating

Thickness or uniformity of thickness determined

148 15, 148174, 427 38, 427 85, 427 82, 427 86, 427 93, 427108, 427255, 427372A, H01L 21363, H01L 2138

Patent

active

041795288

ABSTRACT:
Thickness control problems inherent in the chemical vapor deposition of polysilicon layers on silicon wafers are avoided by an improved vacuum deposition technique.

REFERENCES:
patent: 3765940 (1973-10-01), Hentzschel
patent: 4016016 (1977-04-01), Ipri
patent: 4068020 (1978-01-01), Reuschel
Hale, "Preparation and Evaluation of Epitaxial Silicon Films Prepared by Vacuum Evaporation", Vacuum, vol. 13, No. 3, Mar. 1963, pp. 93-100.
Lawson et al., "The Optimum Conditions for the Vacuum Deposition of Silicon on Sapphire", J. Phys. D. App. Phys., vol. 11 (11-1970).

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