Process for preparing precursor for silicon carbide whiskers

Details Process for preparing precursor for silicon carbide whiskers Process for preparing precursor for silicon carbide whiskers

1989-06-29

1990-11-20

Pianalto, Bernard

Coating processes

Particles, flakes, or granules coated or encapsulated

Applying superposed diverse coatings or coating a coated base

427215, 4273977, 4274432, B05D 700

Patent

active

049718347

ABSTRACT:
Precursor suitable for conversion into silicon carbide product containing a substantial amount of silicon carbide whiskers is preferably prepared by impregnating activated carbon particles (through 100 mesh) with silicon tetrachloride dissolved in methylene chloride, then impregnating the particles with aqueous solution of transition metal salt, preferably Ni(NO.sub.3).sub.2 .multidot.6H.sub.2 O, reacting at room temperature to give carbon, hydrated silica, Ni.sup.+30 and HC1, reacting with NaOH to convert HC1 to NaCl and water and drying to remove methylene chloride and water. Molar ratios of carbon to silicon tetrachloride range from 5:1 to 10:1, of transition metal salt to silicon tetrachloride range from 1:50 to 1:200, of water to silicon tetrachloride range from 0.25:1 to 2:1, and of NaOH to silicon tetrachloride range from 0.8:1 to 2.0:1.

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Kendall, J. T. et al., "The Preparation of Pure Silicon Carbide," International Congress of Pure and Applied Chemistry, 11th, London, 1947, pp. 171-175.

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