Polycrystalline silicon Schottky diode array

Coating processes – Electrical product produced – Condenser or capacitor

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Details

156647, 427 85, 427 93, H01L 2948

Patent

active

044253796

ABSTRACT:
A process and structure are disclosed which are suitable for forming large arrays of Schottky diodes at desired locations between mutually perpendicular strips of aluminum and strips of metal-silicide. The invention is particularly useful in creating read-only memories and programmable logic arrays, and allows fabrication of Schottky diodes more compactly than previous structures.

REFERENCES:
patent: 3987216 (1976-10-01), Bhatia
patent: 4180596 (1979-12-01), Crowder
patent: 4215156 (1980-07-01), Dalal
patent: 4220961 (1980-09-01), Werner
patent: 4228212 (1980-10-01), Brown
patent: 4233337 (1980-11-01), Friedman

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