Method for fabricating narrow base width lateral bipolar junctio

Details Method for fabricating narrow base width lateral bipolar junctio Method for fabricating narrow base width lateral bipolar junctio

1995-11-09

1997-03-11

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 34, 437 59, 437 62, 148DIG9, H01L 21265

Patent

active

056100876

ABSTRACT:
A process has been developed in which narrow base width, lateral bipolar junction transistors, and short channel length MOSFET devices, can be simultaneously fabricated, in a silicon on insulator layer. The narrow base width is defined by the width of an insulator sidewall spacer, formed on the sides of a polysilicon gate structure. The narrow base width, resulting in increased transistor gain and switching speed, along with reductions in parasitic capacitances, due to placing devices in a silicon on insulator layer, result in enhanced device performance.

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