Method of forming identically positioned alignment marks on oppo

Details Method of forming identically positioned alignment marks on oppo Method of forming identically positioned alignment marks on oppo

1987-03-17

1988-03-22

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156628, 156643, 156653, 156657, 156644, 1566591, 156662, 2504923, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

047326468

ABSTRACT:
A method of automatically forming identically positioned alignment marks on the front side and the back side of a silicon wafer especially prepared for use in silicon micromechanical technology. The front side and the back side of the silicon wafer are coated with an insulating layer. High-energy heavy ions are directed onto the front side insulating layer. The heavy ions penetrate the front side insulating layer, the wafer, and the back side insulating layer, thus forming single disturbed crystal lattice nuclear tracks in both insulating layers, with the wafer remaining undisturbed.
The nuclear tracks in both insulating layers are etched so that corresponding identically positioned pores are opened. These pores are used as alignment marks for individual further method steps.

REFERENCES:
patent: 3752589 (1973-08-01), Kobayashi
patent: 3802972 (1974-04-01), Fleischer et al.
patent: 4046985 (1977-09-01), Gates
patent: 4059480 (1977-11-01), Ruh et al.
patent: 4131487 (1978-12-01), Pearce et al.
patent: 4293374 (1981-10-01), Chaudhari et al.
patent: 4318752 (1982-03-01), Tien
patent: 4338164 (1982-07-01), Spohr
patent: 4369370 (1983-01-01), Spohr
patent: 4534804 (1985-08-01), Cade
K. E. Petersen, "Silicon as a Mechanical Material", Proceedings of the IEEE, vol. 70, No. 5, May 1982, pp. 420-457.
O. Auciello, "Ion Interaction with Solids: Surface Texturing, Some Bulk Effects, and Their Possible Applications" in Journal of Vacuum Science & Technology, vol. 19, No. 4, Nov./Dec. 1981, pp. 841-867.

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